x, ku-band intern ally matched fet features ? high output power: p1db=44dbm(typ.) ? high gain: g1db=7.0db(typ.) ? high pae: add =30%(typ.) ? broad band: 9.5 10.5ghz ? impedance matched zin/zout = 50 ? hermetically sealed package absolute maximum ratings (case temperature tc=25 ) electrical character istics (case temperature tc=25 ) case style: ik edition 1.2 august 2003 1 FLM0910-25F note : based on eiaj ed-4701 c-111a(c=100pf, r=1.5k ) item symbol rating unit drain-source voltage gate-source voltage total power dissipation storage temperature v ds v gs ptot t stg 15 -5 93.7 -65 to +175 v v w channel temperature t ch 175 power gain at 1db g.c.p. limit item symbol test conditions unit drain current output power at 1db g.c.p. gain flatness i dss p 1db ? g a v db dbm min. typ. max. drain current i dsr ms v a - 10000 - -0.5 -1.5 -3.0 -5.0 - - 43 44 - 6.0 7.0 - - 6.5 7.2 v ds =10v f=9.5 - 10.5 ghz i ds =0.6idss zs=z l =50 power-added efficiency add % - 30 - -- 0.6 - 10.8 16.2 v ds =5v , v gs =0v trans conductance g m v ds =5v , i ds =6.92a pinch-off voltage v p v ds =5v , i ds =500ma gate-source breakdown voltage v gso i gs =-500ua g 1db db thermal resistance r th channel to case - 1.4 1.6 /w channel temperature rise ? tch 10v x idsr x rth - - 100 description the FLM0910-25F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 system. recommended operating condi tion(case temperature tc=25 ) item symbol condition unit dc input voltage forward gate current v ds i gf 10 64 v ma limit r g =25 reverse gate current i gr r g =25 -11.2 ma g.c.p.:gain compression point , s.c.l.:single carrier level esd class 2000v
FLM0910-25F x, ku-band intern ally matched fet 2 output power , power added efficiency vs. input power output power vs. frequency vds=10v, ids=0.6idss 32 34 36 38 40 42 44 46 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6 10.8 frequency (ghz) output power (dbm) 26 dbm 30 dbm 34 dbm 35 dbm 36 dbm 37 dbm 39 dbm p1db vds=10v, ids=0.6idss 32 34 36 38 40 42 44 46 24 26 28 30 32 34 36 38 40 42 input power (dbm) output power (dbm) 0 10 20 30 40 50 60 70 power added efficiency (%) 9.5 ghz 10 ghz 10.5 ghz add 9.5 ghz add 10 ghz add 10.5 ghz pout add
FLM0910-25F x, ku-band intern ally matched fet 3 s-parameter vds=10v , ids=0.6idss s11 s22 9.5g h z 10 9. 5g h z 25 10.5 10 10.5 s12 s21 0.2 3 180 0 -90 +90 scale for |s 21 | scale for | s 12 | 9.5ghz 2 10 10.5 10.5 10 9.5ghz freq [g h z ] m ag ang m ag ang m ag ang m ag ang 90. 71 -88. 02 2. 15 35.09 0. 05 15. 25 0. 26 -77. 71 9. 10. 65 -103. 53 2. 29 18.28 0. 06 -1. 55 0. 22 -107.05 9. 20. 59 -120. 18 2. 40 1. 32 0. 06 -17.77 0. 21 -138.65 9. 30. 53 -138. 00 2. 47 -15. 34 0. 06 -34.01 0. 22 -167.56 9. 40. 47 -156. 97 2. 51 -31. 59 0. 06 -49.64 0. 24 168. 82 9. 50. 42 -177. 22 2. 53 -47. 33 0. 06 -64.58 0. 26 149. 54 9. 60. 39 161. 48 2. 56 -62. 74 0. 06 -79.62 0. 29 133. 93 9. 70. 37 138. 88 2. 59 -78. 13 0. 06 -94.61 0. 30 120. 00 9. 80. 37 116. 07 2. 62 -93. 65 0. 06 -109. 43 0. 31 107. 27 9. 90. 38 93. 62 2. 63 -109. 43 0. 06 -124. 61 0. 32 95. 51 10 0. 40 72. 47 2. 64 -125. 14 0. 06 -140. 33 0. 32 84. 23 10. 10. 41 52. 59 2. 62 -140. 95 0. 06 -155. 72 0. 32 73. 93 10. 20. 43 33. 84 2. 60 -156. 81 0. 06 -172. 24 0. 32 63. 61 10. 30. 44 16. 24 2. 57 -172. 15 0. 06 171.03 0. 32 54. 33 10. 40. 44 -0. 56 2. 53 172. 43 0. 06 154.60 0. 33 44. 93 10. 50. 44 -17. 05 2. 50 156. 88 0. 06 137.92 0. 33 35. 26 10. 60. 43 -33. 47 2. 47 141. 58 0. 06 120.72 0. 33 25. 29 10. 70. 42 -50. 45 2. 44 126. 23 0. 06 103.61 0. 33 15. 68 10. 80. 40 -68. 63 2. 43 110. 45 0. 07 85. 80 0. 32 6. 13 10. 90. 37 -89. 03 2. 43 94.22 0. 07 68. 12 0. 30 -2. 58 11 0. 34 -113. 11 2. 42 77.32 0. 08 50. 38 0. 27 -9. 87 s11 s21 s12 s22
x, ku-band intern ally matched fet 4 FLM0910-25F package out line unit : mm pin assigment 1 : gate 2 : source 3 : drain 4 : source
FLM0910-25F x, ku-band intern ally matched fet 5 for further information please contact : fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu quantum devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj phone: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 fujitsu limited reserves the right to change products and specificat ions without notice. the information does not convey any license under rights of fujitsu limited or others. (? 2003 fujitsu compo und semiconductor, inc. printed in u.s.a. fcsi0202m200 caution fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. fujitsu quantum devices limited business development division 11th floor, hachioji daiichi-seimei bldg. 3-20-6 myojin-cho hachioji-city, tokyo 192-0046, japan phone: +81-426-43-5885 fax: +81-426-43-5582 fujitsu quantum devices singapore pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong phone: +852-23770226 fax: +852-23763269
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